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SSM6J213FE(TE85L,F

Description:
MOSFET P CH 20V 2.6A ES6
Manufacturer:
Toshiba Semiconductor and Storage
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SSM6J213FE(TE85L,F

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Rds On (Max) @ Id, Vgs
103 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) @ Vgs
4.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds
290pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6

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