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SI2365EDS-T1-GE3

Description:
MOSFET P-CHAN 20V D-S TO-236
Manufacturer:
Vishay Siliconix
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SI2365EDS-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs
32 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
36nC @ 8V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236

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