SSM6N15AFE,LM
- Description：
- MOSF N CH 30V 100MA ES6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 100mA (Ta)
- Rds On (Max) @ Id, Vgs
- 3.6 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id
- 1.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 13.5pF @ 3V
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- ES6
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