SSM3K15ACT(TPL3)
- Description：
- MOSFET N CH 30V 100MA 2-1J1B
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 100mA (Ta)
- Rds On (Max) @ Id, Vgs
- 3.6 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id
- 1.5V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 13.5pF @ 3V
- Power - Max
- 100mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-101, SOT-883
- Supplier Device Package
- CST3
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