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SIHB33N60E-GE3

Description:
MOSFET N CH 600V 33A TO-263
Manufacturer:
Vishay Siliconix
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SIHB33N60E-GE3

Product Information

Category
FETs - Single
Packaging
Bulk
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Rds On (Max) @ Id, Vgs
99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
150nC @ 10V
Input Capacitance (Ciss) @ Vds
3508pF @ 100V
Power - Max
278W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK

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