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SI9926BDY-T1-E3

Description:
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
Manufacturer:
Vishay Siliconix
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SI9926BDY-T1-E3

Product Information

Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6.2A
Rds On (Max) @ Id, Vgs
20 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.14W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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