R8002ANX
- Description：
- MOSFET N-CH 800V 2A TO-220FM
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Single
- Packaging
- Bulk
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 800V
- Current - Continuous Drain (Id) @ 25°C
- 2A (Tc)
- Rds On (Max) @ Id, Vgs
- 4.3 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 12.7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 210pF @ 25V
- Power - Max
- 35W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Supplier Device Package
- TO-220FM
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