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IPB60R299CP

Description:
MOSFET N-CH 650V 11A TO-263
Manufacturer:
Infineon Technologies
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IPB60R299CP

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
11A
Rds On (Max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) @ Vgs
29nC @ 10V
Input Capacitance (Ciss) @ Vds
1100pF @ 100V
Power - Max
96W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3

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