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SI7450DP-T1-E3

Description:
MOSFET N-CH 200V 3.2A PPAK 8SOIC
Manufacturer:
Vishay Siliconix
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SI7450DP-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Rds On (Max) @ Id, Vgs
80 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) @ Vgs
42nC @ 10V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8

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