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BSB012N03LX3 G

Description:
MOSFET N-CH 30V 180A 2WDSON
Manufacturer:
Infineon Technologies
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BSB012N03LX3 G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
39A
Rds On (Max) @ Id, Vgs
1.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) @ Vgs
169nC @ 10V
Input Capacitance (Ciss) @ Vds
16900pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
3-WDSON
Supplier Device Package
MG-WDSON-2, CanPAK M™

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