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BSZ16DN25NS3 G

Description:
MOSFET N-CH 250V 10.9A 8TSDSON
Manufacturer:
Infineon Technologies
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BSZ16DN25NS3 G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
10.9A (Tc)
Rds On (Max) @ Id, Vgs
165 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 32µA
Gate Charge (Qg) @ Vgs
11.4nC @ 10V
Input Capacitance (Ciss) @ Vds
920pF @ 100V
Power - Max
62.5W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
-

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