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SIR802DP-T1-GE3

Description:
MOSFET N-CH D-S 20V 8-SOIC
Manufacturer:
Vishay Siliconix
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SIR802DP-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
32nC @ 10V
Input Capacitance (Ciss) @ Vds
1785pF @ 10V
Power - Max
27.7W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8

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