PMK35EP,518
- Description：
- MOSFET P-CH FET 30V 14.9A 8-SOIC
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 14.9A
- Rds On (Max) @ Id, Vgs
- 19 mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) @ Vgs
- 42nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 2100pF @ 25V
- Power - Max
- 6.9W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
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