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SI3460DDV-T1-GE3

Description:
MOSFET N-CH D-S 20V 6-TSOP
Manufacturer:
Vishay Siliconix
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SI3460DDV-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.9A (Tc)
Rds On (Max) @ Id, Vgs
28 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
18nC @ 8V
Input Capacitance (Ciss) @ Vds
666pF @ 10V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.065", 1.65mm Width)
Supplier Device Package
6-TSOP

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