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TPCC8006-H(TE12LQM

Description:
MOSFET N-CH 30V 22A 8TSON
Manufacturer:
Toshiba Semiconductor and Storage
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TPCC8006-H(TE12LQM

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Rds On (Max) @ Id, Vgs
8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.3V @ 200µA
Gate Charge (Qg) @ Vgs
27nC @ 10V
Input Capacitance (Ciss) @ Vds
2200pF @ 10V
Power - Max
27W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-TSON

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