NTJD4105CT1G
- Description：
- MOSFET N+P 20,8V 630MA SOT-363
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V, 8V
- Current - Continuous Drain (Id) @ 25°C
- 630mA, 775mA
- Rds On (Max) @ Id, Vgs
- 375 mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 3nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 46pF @ 20V
- Power - Max
- 270mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SC-88/SC70-6/SOT-363
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