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SI4778DY-T1-GE3

Description:
MOSFET N-CH D-S 25V 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4778DY-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) @ Vds
680pF @ 13V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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