NX1029X,115
- Description：
- MOSFET DUAL N/P-CH SOT666
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V, 50V
- Current - Continuous Drain (Id) @ 25°C
- 330mA
- Rds On (Max) @ Id, Vgs
- 7.5 Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 0.35nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 36pF @ 25V
- Power - Max
- 330mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- SOT-666
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