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SI2316DS-T1-E3

Description:
MOSFET N-CH 30V 2.9A SOT23-3
Manufacturer:
Vishay Siliconix
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SI2316DS-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Rds On (Max) @ Id, Vgs
50 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) @ Vds
215pF @ 15V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)

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