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SI7900AEDN-T1-GE3

Description:
MOSFET N-CH D-S 20V 1212-8 PPAK
Manufacturer:
Vishay Siliconix
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SI7900AEDN-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
26 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual

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