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DMN2500UFB4-7

Description:
MOSFET N-CH 20V 810A 3DFN
Manufacturer:
Diodes Incorporated
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DMN2500UFB4-7

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
810mA (Ta)
Rds On (Max) @ Id, Vgs
400 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
0.74nC @ 4.5V
Input Capacitance (Ciss) @ Vds
60.67pF @ 16V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Supplier Device Package
3-X2-DFN1006

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