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SI7998DP-T1-GE3

Description:
MOSFET 2N-CH 30V 25A PPAK 8SOIC
Manufacturer:
Vishay Siliconix
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SI7998DP-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
25A, 30A
Rds On (Max) @ Id, Vgs
9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) @ Vds
1100pF @ 15V
Power - Max
22W, 40W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual

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