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PHN210T,118

Description:
MOSFET N-CH 30V 3.4A 8SOIC
Manufacturer:
NXP Semiconductors
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PHN210T,118

Product Information

Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.4A
Rds On (Max) @ Id, Vgs
100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) @ Vgs
6nC @ 10V
Input Capacitance (Ciss) @ Vds
250pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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