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SI5513CDC-T1-GE3

Description:
MOSFET N/P-CH 20V 1206-8
Manufacturer:
Vishay Siliconix
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SI5513CDC-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4A, 3.7A
Rds On (Max) @ Id, Vgs
55 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
4.2nC @ 5V
Input Capacitance (Ciss) @ Vds
285pF @ 10V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™

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