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NTHC5513T1G

Description:
MOSF N/P-CH 20V 2.9A/2.2A 1206A
Manufacturer:
ON Semiconductor
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NTHC5513T1G

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.2A
Rds On (Max) @ Id, Vgs
80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) @ Vgs
4nC @ 4.5V
Input Capacitance (Ciss) @ Vds
180pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
ChipFET™

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