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SI4564DY-T1-GE3

Description:
MOSFET N/P-CH 40V 10A/9.2A 8SOIC
Manufacturer:
Vishay Siliconix
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SI4564DY-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
10A, 9.2A
Rds On (Max) @ Id, Vgs
17.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
31nC @ 10V
Input Capacitance (Ciss) @ Vds
855pF @ 20V
Power - Max
3.1W, 3.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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