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SI4966DY-T1-E3

Description:
MOSFET 2N-CH 20V 8SOIC
Manufacturer:
Vishay Siliconix
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SI4966DY-T1-E3

Product Information

Category
FETs - Arrays
Packaging
Digi-Reel®
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.1A
Rds On (Max) @ Id, Vgs
25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
50nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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