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SI3586DV-T1-E3

Description:
MOSFET N/P-CH 20V 2.9/2.1A 6TSOP
Manufacturer:
Vishay Siliconix
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SI3586DV-T1-E3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.1A
Rds On (Max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.065", 1.65mm Width)
Supplier Device Package
6-TSOP

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