TRS8E65C,S1Q
- Description：
- DIODE SCHOTTKY 650V 8A TO-220-2L
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- Diodes, Rectifiers - Single
- Packaging
- Tube
- Series
- -
- Diode Type
- Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Current - Average Rectified (Io)
- 8A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 8A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)
- -
- Current - Reverse Leakage @ Vr
- 90µA @ 650V
- Capacitance @ Vr, F
- 44pF @ 650V, 1MHz
- Thermal Resistance
- 2.35°C/W Jc
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Supplier Device Package
- TO-220-2L
- Operating Temperature - Junction
- 175°C (Max)
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